Product Details
SIP MOS N-CH 60V 35A TO220 RDS= 0,04R
Specifications
|
FET Type
|
N-Channel |
|
Drain to Source Voltage (Vdss)
|
60 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
35A |
|
Vgs(th) (Max) @ Id
|
2V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
66 nC @ 5 V
|
|
Vgs (Max)
|
±10V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
3300 pF @ 25 V
|
|
Power Dissipation (Max)
|
150W (Tc)
|
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
TO-220AB
|
Additional Information
| Device | MOSFET N-CH |