Product Details
SIP MOS N-Channel 500V 4,5A TO220
N - Channel PowerMOS Transistor
Specifications
- Maximum Power Dissipation: 100 W
- Maximum Drain-Source Voltage: 500 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Drain Current: 4.5 A
- Maximum Junction Temperature: 150 °C
Electrical Characteristics
- Maximum Gate-Threshold Voltage: 4 V
- Total Gate Charge: 22 nC
- Rise Time: 8 nS
- Output Capacitance: 120 pF
- Maximum Drain-Source On-State Resistance: 1.5 Ohm
- Package: TO220
Additional Information
| Device | Transistor |