Product Details
P-CH MOSFET 30V 8.8A 20 mΩ 8P SOIC
Specifications
|
FET Type
|
P-Channel |
|
Technology
|
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss)
|
30 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
8.8A (Ta) |
|
Drive Voltage (Max Rds On, Min Rds On)
|
4.5V, 10V
|
|
Rds On (Max) @ Id, Vgs
|
20mOhm @ 8.8A, 10V
|
|
Vgs(th) (Max) @ Id
|
3V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
40 nC @ 10 V
|
|
Vgs (Max)
|
±25V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1845 pF @ 15 V
|
|
Power Dissipation (Max)
|
2.5W (Ta)
|
|
Operating Temperature
|
-55°C ~ 155°C (TJ)
|
|
Mounting Type
|
Surface Mount
|
|
Supplier Device Package
|
8-SOIC
|
|
Package / Case
|
8-SOIC (0.154", 3.90mm Width) |
Downloads
Additional Information
| Device | IC |