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BUR52

BUR52

Regular price Dhs. 150.00
Regular price Sale price Dhs. 150.00
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Product Details

N 250V 250V 60A 10MN TO3

Transistor Silicon NPN

Specifications

Case TO3
Vbr CBO 350
Vbr CEO 250
Max. PD (W) 350
t(f) Max. (S) .60u
Max. hFE 100
Min hFE 20
Ic Max. (A) 60
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) .20m
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 16M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 350 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 60 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20

Additional Information

Device Transistor