Product Details
SI-N 1500V 8A 125W 0.4us
N 1500V 8A 125W 0,4US TO-3PN
Specifications
- Transistor Type: NPN Bipolar Power Transistor
- Package: TO-3P / TO-218 style power package
- Collector-Emitter Voltage (Vceo): 900 V
- Collector-Base Voltage (Vcbo): 1200 V
- Emitter-Base Voltage (Vebo): 5 V
- Continuous Collector Current (Ic): 8 A
- Peak Collector Current (Icm): 15 A
- Power Dissipation (Pc): ~90 W
- Transition Frequency (fT): ~3 MHz
- Operating Junction Temperature: −65 °C to +150 °C
Additional Information
| Device | Transistor |