Product Details
Silicon PIN Photo Diode 430 to 1100nM 5ns switching 215mW 5,4 x 4,3 Rect. Pkg
Silicon Pin Photo Diode
Feature
- Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
- Radiant sensitive area (in mm2): 7.5
- High photo sensitivity
- High radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Angle of half sensitivity: ϕ = ± 65°
Specifications
|
Wavelength
|
900nm
|
|
Spectral Range
|
430nm ~ 1100nm
|
|
Diode Type
|
PIN
|
|
Voltage - DC Reverse (Vr) (Max)
|
60 V
|
|
Current - Dark (Typ)
|
2nA
|
|
Active Area
|
7.5mm²
|
|
Viewing Angle
|
130°
|
|
Operating Temperature
|
-40°C ~ 100°C
|
|
Mounting Type
|
Through Hole
|
|
Package / Case
|
2-DIP
|
Downloads
Additional Information
| Device | Photo Diode |
| Type | Silicon Pin |