N 30V 20V 30mA 40/85 TO92
Transistor Silicon NPN
Specifications
| Case |
TO92 |
| Vbr CBO |
30 |
| Vbr CEO |
20 |
| Max. PD (W) |
500m |
| C(ob) (F) |
650n |
| Derate (Amb) (W/°C) |
4.0 |
| hfe |
40 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
600M |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
20 |
| Pinout Equivalence Number |
3-16 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.5 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
3 V |
| Maximum Collector Current |Ic max| |
0.03 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
0.9 pF |
| Transition Frequency (ft): |
600 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
Additional Information
