SI-N VID-Low Power 250V 0,03A TO220
Transistor Silicon NPN
Specifications
| Case |
TO126 |
| Vbr CBO |
250 |
| Vbr CEO |
250 |
| Max. PD (W) |
1.8 |
| Min hFE |
50 |
| Ic Max. (A) |
100m |
| @Ic (test) (A) |
25m |
| Icbo Max. @Vcb Max. (A) |
10n |
| Polarity |
NPN |
| R(sat) (Û) |
800m- |
| Derate Above 25°C |
50m |
| Trans. Freq (Hz) Min. |
60M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
20 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
2 W |
| Maximum Collector-Base Voltage |Vcb| |
250 V |
| Maximum Collector-Emitter Voltage |Vce| |
250 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.03 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
60 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
50 |
Additional Information
