Product Details
SI-P 50V 0.2A 0.5W
SI-P 50V 0.2A 0.5W
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 200 to 450
- Transition Frequency, min: 150 MHz
- Noise Figure, max: 2 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Additional Information
| Import Data | SI-P 50V 0.2A 0.5W |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 0.5A |