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BC557A

BC557A

Regular price Dhs. 0.56
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Product Details

SI-P 50V 0.2A 0.5W

P 50V 45V 100MA 125MN TO92

Specifications

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 110 to 220
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Additional Information

Import Data SI-P 50V 0.2A 0.5W
Keywords BJT
Device Transistor
Type Bipolar Junction
Polarity PNP
Material Silicon
Power Dissipation 0.5A