Product Details
N 40V 30V 400MA 30KMN X10
Transistor Silicon NPN
Specifications
- Maximum Collector Power Dissipation (Pc): 0.625 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 30 V
- Maximum Emitter-Base Voltage |Veb|: 10 V
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 120 MHz
- Collector Capacitance (Cc): 5 pF
- Forward Current Transfer Ratio (hFE), MIN: 30000
- Package: TO92
Additional Information
| Device | Transistor |
