Product Details
SIP MOS N-CH 600V 6A 125W 1.25R TO3P
Specifications
- Pd - Maximum Power Dissipation: 125 W
- |Vds|- Maximum Drain-Source Voltage: 600 V
- |Vgs| - Maximum Gate-Source Voltage: 20 V
- |Id| - Maximum Drain Current: 6 A
- Tj - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Downloads
Additional Information
| Device | Transistor |
