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2SK1213

2SK1213

Regular price Dhs. 15.75
Regular price Sale price Dhs. 15.75
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Product Details

SIP MOS N-CH 600V 6A 125W 1.25R TO3P

Specifications

  • Pd - Maximum Power Dissipation: 125 W
  • |Vds|- Maximum Drain-Source Voltage: 600 V
  • |Vgs| - Maximum Gate-Source Voltage: 20 V
  • |Id| - Maximum Drain Current: 6 A
  • Tj - Maximum Junction Temperature: 150 °C

Electrical Characteristics

  • |VGSth| - Maximum Gate-Threshold Voltage: 3.5 V
  • tr - Rise Time: 25 nS
  • RDSon - Maximum Drain-Source On-State Resistance: 1.25 Ohm
  • Package: TO3PN

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Additional Information

Device Transistor