Product Details
SIP MOS N-CH 600V 6A 100W 1.25R TO220
Transistor N Channel MOSFET
Specifications
- Pd - Maximum Power Dissipation: 100 W
- |Vds|- Maximum Drain-Source Voltage: 600 V
- |Vgs|- Maximum Gate-Source Voltage: 20 V
- |Id| - Maximum Drain Current: 6 A
- Tj - Maximum Junction Temperature: 150 °C
Electrical Characteristics
- |VGSth|- Maximum Gate-Threshold Voltage: 3.5 V
- tr - Rise Time: 25 nS
- Coss - Output Capacitance: 250 pF
- RDSon - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Downloads
Additional Information
| Device | Transistor |