Product Details
Silicon NPN Darlington Power Transistor
Silicon NPN Darlington Power Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 20 W
- Maximum Collector-Base Voltage |Vcb|: 120 V
- Maximum Collector-Emitter Voltage |Vce|: 120 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 1.5 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Forward Current Transfer Ratio (hFE), MIN: 15000
Additional Information
| Device | Transistor |