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2SB940

2SB940

Regular price Dhs. 2.96
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Product Details

SI-P 200V 2A 35W 30MHz

Transistor Silicon PNP

Specifications

Case SOT186
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 30
Derate (Amb) (W/°C) 240m
Max. hFE 260
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 180 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100

Additional Information

Device Transistor