Product Details
SI-P 40V 2A 5W 100MHz
Specifications
- Type Designator: 2SB891
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 5 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 2 A
- Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 50 MHz
- Forward Current Transfer Ratio (hFE), MIN: 120
- Noise Figure, dB: -
- Package: TO126
Additional Information
| Frequency Response | 100MHz |
| Import Data | SI-P 40V 2A 5W 100MHz |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |
| Polarity | PNP |
| Material | Silicon |
| Power Dissipation | 5A |