Product Details
Silicon PNP Transistor
Silicon PNP Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 40 W
- Maximum Collector-Base Voltage |Vcb|: 100 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 9 MHz
- Collector Capacitance (Cc): 110 pF
- Forward Current Transfer Ratio (hFE), MIN: 100
Additional Information
| Device | Transistor |