| Case |
TO66 |
| Type |
Transistor Silicon PNP |
| Manufacturer |
Matsushita Electronics |
| Vbr CBO |
150 |
| Vbr CEO |
150 |
| Max. PD (W) |
20 |
| Derate (Amb) (W/°C) |
160m |
| Max. hFE |
150 |
| Min hFE |
30 |
| Ic Max. (A) |
1.2 |
| @Ic (test) (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
30u |
| Polarity |
PNP |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
20 W |
| Maximum Collector-Base Voltage |Vcb| |
150 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
1.2 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
15 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
