Product Details
Transistor Silicon P 110V 2A 23W 80MHz
Transistor Silicon P 110V 2A
Specifications
| Case | TO66 | |
| Polarity | PNP | |
| Maximum Collector Power Dissipation (Pc) | 23 W | |
| Maximum Collector-Base Voltage |Vcb| | 110 V | |
| Maximum Collector-Emitter Voltage |Vce| | 110 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 100 pF | |
| Forward Current Transfer Ratio (hFE), MIN | 50 | |
Additional Information
| Device | Transistor |