Product Details
N 60V 7A 115W TO3
N 60V 7A 115W TO3
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 100 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 15 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 4 MHz
- Collector Capacitance (Cc): 300 pF
- Forward Current Transfer Ratio (hFE), MIN: 20
Downloads
Additional Information
| Device | Transistor |