Product Details
Transistor
Specifications
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 25 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.5 A
- Max. Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 150 MHz
- Collector Capacitance (Cc): 12 pF
- Forward Current Transfer Ratio (hFE), MIN: 50
Additional Information
| CatGroup | Transistor |
| Device | Transistors |
| Type | Bipolar |