Product Details
SIP MOS N-CH 60V 50A TO220 RDS= 0,018R
Specifications
- Channel Type: N Channel
- Transistor Polarity: N Channel
- Drain Source Voltage Vds: 60V
- Continuous Drain Current Id: 50A
- Drain Source On State Resistance: 0.015ohm
- On Resistance Rds(on): 0.015ohm
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3V
- Power Dissipation Pd: 30W
- Power Dissipation: 30W
- No. of Pins: 3Pins
- Operating Temperature Max: 175°C
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Additional Information
| CatGroup | Field Effect Transistor |