Product Details
N-MOSFET 100V 120A (180A surge) 370W TO220 Rds = 3,7 - 4,5 mOhm
N-Channel MOSFET Power Transistor
Specifications
- Maximum Power Dissipation: 370 W
- Maximum Drain-Source Voltage: 100 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Drain Current: 180 A
- Maximum Junction Temperature: 175 °C
Electrical Characteristics
- Maximum Gate-Threshold Voltage: 4 V
- Total Gate Charge: 150 nC
- Rise Time: 67 nS
- Output Capacitance: 670 pF
- Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Additional Information
| Device | Transistor |