Product Details
SIP MOS P 200V 1,75A 3R TO220
Specifications
|
FET Type
|
P-Channel |
|
Technology
|
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss)
|
200 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
1.8A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
3Ohm @ 900mA, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
11 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
170 pF @ 25 V
|
|
Power Dissipation (Max)
|
20W (Tc)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
TO-220AB
|
Downloads
Additional Information
| Device | Transistor |