Product Details
N-MOSFET 600V 2A 23W 4.7 Ω TO-220F
MOSFET 600V N-Channel
Specifications
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Vds - Drain-Source Breakdown Voltage : 600 V
- Id - Continuous Drain Current : 2 A
- Rds On - Drain-Source Resistance : 4.7 Ohms
- Vgs - Gate-Source Voltage : - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage : 2 V
- Qg - Gate Charge : 12 nC
- Minimum Operating Temperature : - 55 C
- Maximum Operating Temperature : + 150 C
- Pd - Power Dissipation : 23 W
Downloads
Additional Information
| Device | MOSFET |
| Type | 600V | N-Channel |