Product Details
N 450V 1000V 2A SOT82 Transistor
Silicon NPN Power Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 62 W
- Maximum Collector-Base Voltage |Vcb|: 150 V
- Maximum Collector-Emitter Voltage |Vce|: 120 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 10 A
- Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
- Transition Frequency (ft): 30 MHz
- Forward Current Transfer Ratio (hFE), MIN: 30
Additional Information
| Device | Transistor |