N 250V 250V 60A 10MN TO3

Transistor Silicon NPN

Specifications

Case	TO3
Vbr CBO	350
Vbr CEO	250
Max. PD (W)	350
t(f) Max. (S)	.60u
Max. hFE	100
Min hFE	20
Ic Max. (A)	60
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	.20m
Polarity	NPN
Tr Max. (s)	1.0u
Derate Above 25°C	2.0
Trans. Freq (Hz) Min.	16M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	350 W
Maximum Collector-Base Voltage \|Vcb\|	350 V
Maximum Collector-Emitter Voltage \|Vce\|	250 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	60 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	20

Device

Transistor