Product Details
NPN Bipolar Junction Transistor
NPN Bipolar Junction Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 0.25 W
- Maximum Collector-Base Voltage |Vcb|: 15 V
- Maximum Collector-Emitter Voltage |Vce|: 12 V
- Maximum Emitter-Base Voltage |Veb|: 2 V
- Maximum Collector Current |Ic max|: 0.035 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 5000 MHz
- Forward Current Transfer Ratio (hFE), MIN: 40
- Package: TO51
Additional Information
| Device | Transistor |
