Material of Transistor: Si

Polarity: PNP 

Maximum Collector  Power Dissipation (Pc): 0.83 W

Maximum Collector  -Base Voltage  |Vcb|: 250 V

Maximum Collector-Emitter Voltage  |Vce|: 250 V

Maximum Emitter-Base Voltage  |Veb|: 5 V

Maximum Collector  Current |Ic max|: 0.2 A

Max. Operating  Junction Temperature  (Tj): 150 °C

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 1.6 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92