N 115V 100V 6A 30MN TO220
Transistor Silicon NPN
Specifications
| Case |
TO220 |
| Vbr CBO |
100 |
| Vbr CEO |
100 |
| Max. PD (W) |
65 |
| t(f) Max. (S) |
15n |
| Min hFE |
30 |
| Ic Max. (A) |
8.0 |
| @Ic (test) (A) |
300m |
| Icbo Max. @Vcb Max. (A) |
400u |
| Polarity |
NPN |
| Tr Max. (s) |
15n |
| R(sat) (Û) |
250m |
| Derate Above 25°C |
520m |
| Trans. Freq (Hz) Min. |
3.0M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
4.0 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
65 W |
| Maximum Collector-Base Voltage |Vcb| |
115 V |
| Maximum Collector-Emitter Voltage |Vce| |
100 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
6 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
Additional Information
