• Material of Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 30 W
• Maximum Collector-Base Voltage |Vcb|: 80 V
• Maximum Collector-Emitter Voltage |Vce|: 80 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Maximum Collector Current |Ic max|: 3 A
• Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

• Transition Frequency (ft): 3 MHz
• Forward Current Transfer Ratio (hFE), MIN: 40
• Package: TO126