Product Details
P 100V 1A 0,8W 50MHZ
Transistor Silicon PNP
Specifications
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 1 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 50 MHz
- Forward Current Transfer Ratio (hFE), MIN: 40
- Package: TO92
Additional Information
| Device | Transistor |