N 80V 80V 1A 60MN TO92

Transistor Silicon NPN

Specifications

Case	TO92
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	625m
C(ob) (F)	7.0p
Derate (Amb) (W/°C)	5.0m
hfe	60
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	100m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.625 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	12 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	60

Device

Transistor