N 50V 45V 800mA 250MN X10
Transistor Silicon NPN
Specifications
| Case |
TO92 |
| Vbr CBO |
50 |
| Vbr CEO |
45 |
| Max. PD (W) |
600m |
| C(ob) (F) |
12p |
| Derate (Amb) (W/°C) |
4.8m |
| hfe |
630= |
| Ic Max. (A) |
800m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
100M |
| @VCE (test) (V) |
1.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
100m |
| Pinout Equivalence Number |
3-17 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.36 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
45 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.8 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
20 pF |
| Transition Frequency (ft): |
60 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
250 |
Additional Information
