Product Details
N 30V 20V 100MA 200MN X10 Transistor
Transistor Silicon NPN
Specifications
- Maximum Collector Power Dissipation (Pc): 0.3 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 20 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.1 A
- Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
- Transition Frequency (ft): 150 MHz
- Collector Capacitance (Cc): 5 pF
- Forward Current Transfer Ratio (hFE), MIN: 200
- Package: TO92
Additional Information
| Device | Transistor |