P 60V 60V 1A 40MN TO39 Transistor
Transistor Silicon NPN
Specifications
| Case |
TO39 |
| Vbr CBO |
60 |
| Vbr CEO |
60 |
| Max. PD (W) |
3.7 |
| Derate (Amb) (W/°C) |
20m |
| t(f) Max. (S) |
650n+ |
| Max. hFE |
400 |
| Min hFE |
40 |
| Ic Max. (A) |
1.0 |
| @Ic (test) (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Tr Max. (s) |
500n |
| R(sat) (Û) |
1.0 |
| Trans. Freq (Hz) Min. |
50M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
1.0 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
3.2 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
1 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
30 pF |
| Transition Frequency (ft): |
50 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
Additional Information
