Product Details
Gate NAND 13 INP +VE
Specifications
Electrical Characteristics
- Supply Voltage (Vcc): 4.75V – 5.25V
- Nominal Supply Voltage: 5V
- Input Voltage High (VIH): Min 2V
- Input Voltage Low (VIL): Max 0.8V
- Output Voltage High (VOH): Min 2.7V at IOH = –0.4 mA
- Output Voltage Low (VOL): Max 0.5V at IOL = 8 mA
- Propagation Delay (tpd): Typical 15 ns
- Power Dissipation: Approx. 20 mW per device
Absolute Maximum Ratings
- Supply Voltage (Vcc): 7V
- Input Voltage: –0.5V to 7V
- Operating Temperature Range: 0°C to +70°C (Commercial)
- Storage Temperature Range: –65°C to +150°C
Additional Information
| Device | IC |