Product Details
Silicon NPN Power Transistor 750V 4A 30W 8MHZ TO3
Silicon NPN Power Transistor
Specifications
- Maximum Collector Power Dissipation (Pc): 30 W
- Maximum Collector-Base Voltage |Vcb|: 750 V
- Maximum Emitter-Base Voltage |Veb|: 6 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 8 MHz
- Collector Capacitance (Cc): 85 pF
- Forward Current Transfer Ratio (hFE), MIN: 15
Additional Information
| Device | Transistor |