N 80V 80V 5A 20/30 TO3 Transistor
Transistor Silicon NPN
Specifications
| Case |
TO3 |
| Vbr CBO |
80 |
| Vbr CEO |
80 |
| Max. PD (W) |
50 |
| Max. hFE |
30- |
| Min hFE |
20 |
| Ic Max. (A) |
5.0 |
| @Ic (test) (A) |
4.0 |
| Icbo Max. @Vcb Max. (A) |
10m |
| Polarity |
NPN |
| R(sat) (Û) |
320m |
| Derate Above 25°C |
666m |
| Trans. Freq (Hz) Min. |
300k |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
4.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
50 W |
| Maximum Collector-Base Voltage |Vcb| |
80 V |
| Maximum Collector-Emitter Voltage |Vce| |
80 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
1 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
Additional Information
