Product Details
Transistor Silicon NPN
Transistor Silicon NPN
Specifications
- Maximum Collector Power Dissipation (Pc): 0.25 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 20 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.02 A
- Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
- Transition Frequency (ft): 300 MHz
- Collector Capacitance (Cc): 2 pF
- Forward Current Transfer Ratio (hFE), MIN: 90
