Transistor Silicon PNP

Specifications

Case	SOT186
Vbr CBO	200
Vbr CEO	150
Max. PD (W)	30
Derate (Amb) (W/°C)	240m
Max. hFE	260
Min hFE	60
Ic Max. (A)	2.0
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	180 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	100

Device

Transistor