Product Details
Transistor Silicon NPN
Transistor Silicon NPN
Specifications
| Case | TO3 | |
| Vbr CBO | 130 | |
| Vbr CEO | 110 | |
| Max. PD (W) | 100 | |
| Max. hFE | 200 | |
| Min hFE | 50 | |
| Ic Max. (A) | 10 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 100u | |
| Polarity | NPN | |
| Derate Above 25°C | 666m | |
| Trans. Freq (Hz) Min. | 3.0M | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 100 W | |
| Maximum Collector-Base Voltage |Vcb| | 130 V | |
| Maximum Collector-Emitter Voltage |Vce| | 110 V | |
| Maximum Emitter-Base Voltage |Veb| | 7 V | |
| Maximum Collector Current |Ic max| | 10 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 200 pF | |
| Transition Frequency (ft): | 3 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 50 | |
Additional Information
| Device | Transistor |
