SI-P 140V 10A 120W 17MHz

Transistor Silicon PNP

Specifications

Vbr CBO	140
Vbr CEO	140
Max. PD (W)	120
Derate (Amb) (W/°C)	960m
Max. hFE	200
Min hFE	40
Ic Max. (A)	10
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	17M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	4-33
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	120 W
Maximum Collector-Base Voltage \|Vcb\|	140 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	430 pF
Transition Frequency (ft):	9 MHz
Forward Current Transfer Ratio (hFE), MIN	80

Device

Transistor