Product Details
Transistor
Transistor Silicon PNP
Specifications
| Case | TO220 | |
| Vbr CBO | 80 | |
| Vbr CEO | 80 | |
| Max. PD (W) | 30 | |
| Derate (Amb) (W/°C) | 240m | |
| Max. hFE | 240 | |
| Min hFE | 40 | |
| Ic Max. (A) | 4.0 | |
| @Ic (test) (A) | 500m | |
| Icbo Max. @Vcb Max. (A) | 30u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 3.0M | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 30 W | |
| Maximum Collector-Base Voltage |Vcb| | 80 V | |
| Maximum Collector-Emitter Voltage |Vce| | 80 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 4 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 130 pF | |
| Transition Frequency (ft): | 3 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
Additional Information
| Device | Transistor |