Product Details
P 30V 1A 1W 110MHZ
P 30V 1A 1W 110MHZ
Specifications
| Case | TO92L | |
| Type | Transistor Silicon PNP | |
| Manufacturer | Generic | |
| Vbr CBO | 30 | |
| Vbr CEO | 25 | |
| Max. PD (W) | 800m | |
| C(ob) (F) | 36p | |
| Derate (Amb) (W/°C) | 6.4m | |
| hfe | 200 | |
| Ic Max. (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 100n | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 110M | |
| @VCE (test) (V) | 1.0 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 100m | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.8 W | |
| Maximum Collector-Base Voltage |Vcb| | 30 V | |
| Maximum Collector-Emitter Voltage |Vce| | 25 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 1 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Collector Capacitance (Cc) | 10 pF | |
| Transition Frequency (ft): | 55 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 90 | |
Additional Information
| Import Data | SI-P 30V 1A 0.8W |
| Keywords | BJT |
| Device | Transistor |
| Type | Bipolar Junction |