Product Details
P 100V 20A DARLGTN 100W TO3P
P 100V 20A DARLGTN 100W TO3P
Specifications
- Polarity : PNP Darlington
- Package : TO‑3P
- Max Collector‑Base Voltage (VCBO) : –100 V
- Max Collector‑Emitter Voltage (VCEO) –80 V (Hitachi); sustaining –100 V (ISC)
- Max Emitter‑Base Voltage (VEBO) : –5 V
- Max Collector Current (IC) : –20 A
- Max Collector Power Dissipation (Pc) : 100 W
- DC Current Gain (hFE) : ≥ 1 000 @ IC = –10 A
- hFE Max : ~20 k (source: LittleDiode)
- Max Junction Temperature (Tj) : 175 °C
Additional Information
| Device | Transistor |