Product Details
Transistor Silicon PNP
Transistor Silicon PNP
Specifications
| Case | TO92 | |
| Vbr CEO | 32 | |
| Max. PD (W) | 750m | |
| hfe | 390= | |
| Ic Max. (A) | 3.0 | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 100M | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.75 W | |
| Maximum Collector-Base Voltage |Vcb| | 40 V | |
| Maximum Collector-Emitter Voltage |Vce| | 40 V | |
| Maximum Emitter-Base Voltage |Veb| | 9 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 185 °C | |
| Transition Frequency (ft): | 50 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 140 | |
Additional Information
| Device | Transistor |