Transistor PNP NF/S-L,80V 6A,50W,10MHz TO3
Transistor Silicon PNP
Specifications
| Case |
TO3 |
| Vbr CBO |
80 |
| Vbr CEO |
80 |
| Max. PD (W) |
50 |
| Derate (Amb) (W/°C) |
454m |
| Max. hFE |
50- |
| Min hFE |
20 |
| Ic Max. (A) |
6.0 |
| @Ic (test) (A) |
3.0 |
| Icbo Max. @Vcb Max. (A) |
1.0m |
| Polarity |
PNP |
| R(sat) (Û) |
500m |
| Trans. Freq (Hz) Min. |
10M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
4.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
50 W |
| Maximum Collector-Base Voltage |Vcb| |
80 V |
| Maximum Collector-Emitter Voltage |Vce| |
80 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
6 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Transition Frequency (ft): |
10 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
Additional Information
