Product Details
P 60V 60V 10A 50/150 TO3 PNP Silicon Power Transistor
PNP Silicon Power Transistor
Specifications
- Polarity : PNP
- Collector-Base Voltage (Vcbo) : 60 V
- Collector-Emitter Voltage (Vceo) : 60 V
- Emitter-Base Voltage (Vebo) : ~5–7 V
- Collector Current (Ic max) : 10 A
- Power Dissipation (Ptot) : 150–200 W (with proper heatsink)
- Gain (hFE) : Typically 20–50
- Transition Frequency (ft) : 50–150 MHz
- Package : TO-3 metal can
- Operating Temperature : Up to ~150 °C
Additional Information
| Device | Transistor |
| Type | PNP | Silicon | Power |