4 Unit 1,5A Darl Trans Array
Transistor Silicon NPN
Specifications
| Case |
DIP16 |
| Min hFE |
800 |
| Polarity |
NPN |
| PD Max. (W) |
2.5 |
| @VCE (test) (V) |
4.0 |
| @Ic (test) |
1.0 |
| Ic Max. |
1.25 |
| Vceo Max. |
50 |
| Pinout Equivalence Number |
16-102 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
1.92 W |
| Maximum Collector-Emitter Voltage |Vce| |
50 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
1.5 A |
| Max. Operating Junction Temperature (Tj) |
75 °C |
| Forward Current Transfer Ratio (hFE), MIN |
800 |
Additional Information
